Publications

 

A: Journal articles:

 

2009

 

112. “CoSi2-coated Si nanocrystal memories”

          Bei Li, and Jianlin Liu

          J. Appl. Phys. 105, 084905(2009)

 

111. “Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes”

         Mario Olmedo, Alfredo A. Martinez-Morales, Gang Liu, Emre Yengel, Cengiz S. Ozkan,

         Chun Ning Lau, Mihrimah Ozkan, and Jianlin Liu

         Appl. Phys. Lett. 94, 123109(2009)

 

110. “Microstructures and transport properties of ZnO:Mn diluted magnetic semiconductor thin films”

         Z. Yang, W. P. Beyermann, M. B. Katz, O. K. Ezekoye, Z. Zuo, Y. Pu, J. Shi, X. Q. Pan, and J. L. Liu

         J. Appl. Phys. 105, 053708(2009)

 

109. “Ga-related photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam epitaxy”

         Z. Yang, D. C. Look, and J. L. Liu

         Appl. Phys. Lett. 94, 072101(2009)

 

2008

 

108. “Electron carrier concentration dependent magnetization and transport properties in ZnO:Co diluted magnetic semiconductor thin films”

        Z. Yang, M. Biasini, W. P. Beyermann, M. B. Katz, O. K. Ezekoye, X. Q. Pan, Y. Pu, J. Shi, Z. Zuo, and J. L. Liu

        J. Appl. Phys. 104, 113712(2008)

 

107. “Study of plasma power effect on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitacy”

         Z. Yang, J.-H. Lim, S. Chu, Z. Zuo, and J. L. Liu

         Applied Surface Science 255, 3375(2008)

 

106. “Electrically pumped ZnO ultraviolet diode lasers on Si”

          Sheng Chu, Mario Olmedo, Zheng Yang, Jieying Kong, and Jianlin Liu

          Appl. Phys. Lett. 93, 181106(2008)

 

105. “Dominant ultraviolet light emissions in packed ZnO columnar homojunction diodes”

         Jieying Kong, Sheng Chu, Mario Olmedo, Lin Li, Zheng Yang, and Jianlin Liu

         Appl. Phys. Lett. 93, 132113(2008)

 

104. “A TiSi2/Si hetero-nanocrystal memory operated with hot carrier injections”

          Y. Zhu, and J. L. Liu

          IEEE Transactions on Nanotechnology  7, 305(2008)

 

103. “Generation of nitrogen acceptors in ZnO using pulse thermal processing”

        Jun Xu, Ronald Ott, Adrian S. Sabau, Zhengwei Pan, Faxian Xiu, Jianlin Liu, Jean-Marie Erie, and David P. Norton

          Appl. Phys. Lett. 92, 151112(2008)

 

102. “Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes”

           S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li and J. L. Liu

          Appl. Phys. Lett. 92, 152103(2008)

 

101. “Ultraviolet emission from Sb-doped p-type ZnO-based heterojunction light emitting diodes”

         L. J. Mandalapu, Z. Yang, S. Chu, and J. L. Liu

         Appl. Phys. Lett. 92, 122101(2008)     

 

100. “Electron beam induced current profiling of ZnO p-n homojunctions”

        L. Chernyak, C. Schwarz, E. S. Flitsiyan, S. Chu, J. L. Liu, and K. Gartsman

        Appl. Phys. Lett. 92, 102106(2008)

 

99. “Electron concentration dependent magnetization and magnetic anisotropy in ZnO:Mn thin films”

       Z. Yang, J. L. Liu, M. Biasini, and W. Beyermann

       Appl. Phys. Lett. 92, 042111(2008)

 

2007

 

98. “Ge/Si self-assembled quantum dots and their optoelectronic device applications”

       K. L. Wang, D. H. Cha, J. L. Liu, and C. Chen

       Proceedings of The IEEE 95, 1866(2007) (Invited paper)

 

97. “Ge/Si heteronanocrystal floating gate memory”

       Bei Li, Jianlin Liu, G. F. Liu, and J. A. Yormoff

       Appl. Phys. Lett. 91, 132107(2007)

 

96. “Response to “Comment on “p-type behavior from Sb-doped ZnO heterojunction diodes”

        L. J. Mandalapu, and J. L. Liu

        Appl. Phys. Lett. 91, 136102(2007)

 

95. “Al/Ti contacts to Sb-doped p-ZnO”

       L. J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liu

       J. Applied Physics 102, 023716(2007)

 

94. “Influence of electron injection on the temporal response of ZnO homo-junction diodes”

      O. Lopatiuk-Tirpak, G. Nootz, E. Flitsiyan, L. Chernyak, L. J. Mandalapu, Z. Yang, J. L. Liu,

       K. Gartsman, and A. Osinsky

       Applied Physics Letters 91, 042115(2007)  

 

93. “Ultraviolet photoconductive detectors based on Ga-doped ZnO by molecular beam epitaxy”

      L. J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liu

      Solid-state Electronics 51, 1014(2007)

 

92. “Low-resistivity Au/Ni contacts to Sb-doped p-type ZnO”

       L. J. Mandalapu, Z. Yang, and J. L. Liu

       Appl. Phys. Lett. 90, 252103(2007)

 

91. “Fabrication and characterization of TiSi2/Si heteronanocrystal metal-oxide-semiconductor memories”

       Y. Zhu, B. Li, and J. L. Liu

       J. Appl. Phys. 101, 063702(2007)

 

90. “Response to “Comment on ‘Photoluminescence study of Sb-doped p-type ZnO films by molecular beam epitaxy’””

       F. X. Xiu, and J. L. Liu

       Appl. Phys. Lett. 90, 116103(2007)

 

89. “Numerical investigation of transient capacitance of Ge/Si hetero-nanocrystal memory in retention mode”

        Yan Zhu, Dengtao Zhao, and Jianlin Liu

         Journal of Applied Physics 101, 034508(2007)

 

2006

 

88. “TiSi2/Si heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory”

        Yan Zhu, Bei Li, Jianlin Liu, G. F. Liu and J. A. Yarmoff

        Applied Physics Letters, 89, 233113(2006)

 

87.  “Influence of the electron injection on the photoresponse of ZnO homojunction diode”

       O. Lopatiuk-Tirpak, L. Chernyak, L. Mandalapu, Z. Yang, J. L. Liu, K. Gartsman, Y. Feldman,

       Z. Dashvsky

      Appl. Phys. Lett. 89, 142114(2006)

 

86. “Study of minority carrier diffusion length increase in p-pty ZnO:Sb”

      O. Lopatiuk-Tirpak, L. Chernyak, F. X. Xiu, J. L. Liu, S. Tan, F. Ren, S. Pearton, K. Gartsman,

      Y. Feldman, A. Osinsky, P. Chow

      J. Appl. Phys. 100, 086101(2006)

 

85. “Folded acoustic phonon modes in Ge/Si quantum dot superlattices with different periods”

        Zheng Yang, Jianlin Liu, Yi Shi, Youdou Zheng, and Kang L. Wang

        Journal of Nanoelectronics and Optoelectronics, 1, 86(2006)

 

84. “Bi-induced acceptor states in ZnO by molecular beam epitaxy”

        F. X. Xiu, L. J. Mandalapu, Z. Yang, J. L. Liu, G. F. Liu, and J. A. Yarmoff

        Appl. Phys. Lett. 89, 052103(2006)

 

83. “Emerging memory devices: Nontraditional possibilities based on nanomaterials and nanostructures”

        K. Galatsis, Y.Y. Botros, K. Wang, Y. Yang, Y. H. Xie, F. Stoddart, R. Kaner, C. Ozkan, J. L. Liu,

        M.Ozkan, C. Zhou, and K. W. Kim

        IEEE Circuits & Devices Magazine, 22, 12(2006)

 

82. “Carrier concentration dependence of acceptor binding energy in p-type ZnO”

        O. Lopatiuk-Tirpak, W. V. Schoenfeld, L. Chernyak, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, S. J. Pearton,

        A. Osinsky and P. Chow

        Appl. Phys. Lett. 88, 202110(2006)

 

81. “Donor and acceptor competitions in phosphorus-doped ZnO”

        F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu

        Appl. Phys. Lett. 88, 152116(2006)

 

80. “Transient process in a Ge/Si hetero-nanocrystal p-channel memory”

        Dengtao Zhao, Yan Zhu, Ruigang Li, and Jianlin Liu

        Solid-state Electronics 50, 362(2006)

 

79. “Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals”

       Vladimir A. Fonoberov, Khan A. Alim, Alexander A. Balandin, Faxian Xiu and Jianlin Liu

        Phys. Rev. B 73, 165317(2006)

 

78. “p-type behavior from Sb-doped ZnO heterojunction photodiode”

        L. J. Mandalapu, F. X. Xiu, Z. Yang, D. T. Zhao, and J. L. Liu

        Appl. Phys. Lett. 88, 112108(2006)

 

77.  “Self-aligned TiSi2/Si heteronanocrystal nonvolatile memory”

         Yan Zhu, Dengtao Zhao, Ruigang Li, and Jianlin Liu

          Appl. Phys. Lett. 88, 103507(2006)

 

76. “Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection”

        L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao, and J. L. Liu

        Appl. Phys. Lett. 88, 092103(2006)

 

75. “Charge storage in a metal-oxide-semiconductor capacitor containing cobalt nanocrystals”

        Dengtao Zhao, Yan Zhu, and Jianlin Liu

        Solid-State Electronics 50, 268(2006)

 

74. “p-type ZnO films with solid-source phosphorus doping using molecular beam epitaxy”

        F. X. Xiu, Z. Yang, L.J. Mandalapu, J. L. Liu, and W. Beyermann

        Appl. Phys. Lett. 88, 052106(2006)

 

73. “Sb surfactant-mediated SiGe graded buffer layers for Ge diodes integrated on Si”

       J. L. Liu, Z. Yang, and K. L. Wang

       J.  Appl. Phys. 99, 024504(2006)

 

72. “Simulation of a Ge-Si Hetero-Nanocrystal Memory”

        D. T. Zhao, Y. Zhu, R. G. Li, and J. L. Liu

        IEEE Trans. on Nanotechnology, 5, 37(2006)

 

71. “ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE”

        Faxian Xiu, Zheng Yang, Dengtao Zhao, Jianlin Liu, Khan A. Alim, Alexander A. Balandin,

        Mikhail E. Itkis, and Robert C. Haddon

        Journal of Crystal Growth 286, 61(2006)

 

2005

 

70. “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy”

        F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu

        Appl. Phys. Lett. 87, 252102(2005)

 

69. “Simulation of a cobalt silicide/Si hetero-nanocrystal memory”

        Dengtao Zhao, Yan Zhu, Ruigang Li, and Jianlin Liu

        Solid-State Electronics 49, 1974(2005)

 

68. “Phonon-hopping thermal conductivity reduction in quatum dot superlattices”

        Manu Shamsa, Weili Liu, Alexander Balandin, and Jianlin Liu

        Appl. Phys. Lett. 87, 202105(2005)

 

67. “High-mobility Sb-doped P-type ZnO by Molecular Beam Epitaxy”

        F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, and W. P. Beyermann

        Appl. Phys. Lett. 87, 152101(2005)

 

66. “Electrical and Thermal Conductivity of Ge/Si Quantum Dot Superlattices”

        Y. Bao, W. L. Liu, M. Sharma, K. Alim, A. A. Balandin, and J. L. Liu

        Journal of The Electrochemical Society, 152, 432(2005)

 

65. “Threshold voltage shift of heteronanocrystal floating gate flash memory”

        Yan Zhu, Dengtao Zhao, Ruigang Li, and Jianlin Liu

        J. Appl. Phys. 97, 034309(2005)

 

64. “The Effect of Plastic Strain Relaxation on the Morphology of Ge Quantum Dot Superlattices”

        J. L. Liu, K. L. Wang, Q. H. Xie, and S. G. Thomas

        J. Crystal Growth, 274, 367(2005)

 

2004

 

63. “Optical properties of Ge/Si quantum dot superlattices”

        Zheng Yang, Yi Shi, Jianlin Liu, Bo Yan, Rong Zhang, Youdou Zheng, and Kanglong Wang

        Materials Letters 58, 3765(2004)

 

62.  “Normal incident Mid-Infrared Ge Quantum Dot Photodetector”

        Fei Liu, Song Tong, J. L. Liu, and K. L. Wang,

        Journal of Electronic Materials, vol. 33, No. 8, p846-850, 2004

 

61.  “Tunable normal incident Ge quantum dot midinfrared photodetectors”

        S. Tong, F. Liu, A. Khitun, K. L. Wang, and J. L. Liu

        J. Appl. Phys. 96, 773(2004)

 

60. “Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices”

       Y. Bao, A. A. Balandin, J. L. Liu, J. Liu, and Y. H. Xie

        Appl. Phys. Lett. 84, 3355(2004)

 

59. “On the modeling of lattice thermal conductivity in semiconductor quantum dot superlattices”

       A. Khitun, J. L. Liu, and K. L. Wang

       Appl. Phys. Lett. 84, 1762(2004)

 

2003

 

58.  “Strain and Phonon Confinement in Self-assembled Ge Quantum Dot Superlattices”

         Z. Yang, Y. Shi, J. L. Liu, B. Yan, Z. X. Huang, L. Pu, Y. D. Zheng, and K. L. Wang,

         Chin. Phys. Lett. 20, 2001 (2003)

 

57.  “Temperature effect on the formation of uniform self-assembled Ge dots”

        G.Jin, J.L.Liu, and K.L.Wang

        Appl. Phys. Lett. 83, 2847(2003)

 

56. “Cross-plane thermal conductivity of self-assembled Ge quantum dot superlattices”

        J.L.Liu, A. Khitun, K.L.Wang, W. L. Liu, G. Chen, Q. H. Xie, and S. G. Thomas

        Phys. Rev. B, 67, 165333(2003)

 

1994-2002

 

55. "Measurements of anisotropic thermoelectric properties in superlattice"

        B. Yang, W. L. Liu, J. L. Liu, K. L. Wang, and G. Chen

        Appl. Phys. Lett. 81, 3588(2002)

 

54. “Optical phonons in self-assembled Ge quantum dot superlattices: strain relaxation effects”

        J.L.Liu, J.Wan, Z.M.Jiang, A.Khitun, and K.L.Wang

        J. Appl. Phys. 92, 6804(2002)

 

53. “Simultaneous Measurements of Seebeck Coefficient and Thermal Conductivity Across Superlattice”

       B.Yang, J.L.Liu, K.L.Wang, and G.Chen

       Appl. Phys. Lett. 80, 1758(2002)

 

52. “An effective compliant substrate for low-dislocation relaxed Si1-xGex growth”

        Y.H.Luo, J.L.Liu, G.Jin, J.Wan, and K.L.Wang

         Appl.Phys.A 74, 699(2002)

 

51. “Normal-incidence Ge Quantum-dot Photodetectors at 1.5 Micron Based on Si Substrate”

       S. Tong, J.L.Liu, Jun Wan, and Kang L. Wang

       Appl. Phys. Lett. 80, 1189(2002)

 

50. “High-quality Ge Films on Si Substrates using Sb-surfactant-mediated graded SiGe buffers”

        J.L.Liu, S.Tong, Y.H.Luo, J.Wan, and K.L.Wang

        Appl. Phys. Lett. 79, 3431(2001)

 

49. “The effect of the long-range order in a quantum dot array on the in-plane lattice thermal conductivity”

A.Khitun, A.Balandin, J.L.Liu, and K.L.Wang

Superlattices and Microstructures, Vol.30, 1(2001)

 

48. “Ge/Si Interdiffusion in the SiGe Dots and Wetting Layers”

        J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, K.L. Wang , X. Z. Liao, and J. Zou

        J. Appl. Phys. 90, 4290(2001)

 

47. “Effect of Interdiffusion on the Band Alignment of SiGe Dots”

        J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, K.L. Wang,  X. Z. Liao, and J. Zou

        Appl. Phys. Lett. 79, 1980(2001)

 

46. “High-quality strain-relaxed SiGe films grown with low temperature Si buffer”

       Y.H.Luo, J.Wan, R.L.Forrest, J.L.Liu, M.S.Goorsky, and K.L.Wang, 

       J. Appl. Phys. 89, 8279(2001)

 

45. “Anisotropic Thermal Conductivity of Si/Ge Strained and Quantum Dot Superlattices”

         W.L.Liu, T.Borca-Tasciuc, G.Chen, J.L.Liu, and K.L.Wang

         J. Nanosci. Nanotech. 1, 39(2001)

 

44. “Band Alignments And Photon-induced Carriers Transfer from Wetting Layers to Ge Quantum Dots grown on Si(001)”

        J.Wan, G.L.Jin, Z.M.Jiang, Y.H.Luo, J.L.Liu, and K.L.Wang

        Appl. Phys. Lett. 78, 1763(2001)

 

43. “Growth of carbon nanotubes by gas source molecular beam epitaxy”

        J.Wan, Y.H.Luo, Sung D.Choi, R.G.Li, G.Jin, J.L.Liu, and K.L.Wang

        J. Appl. Phys. 89, 1973 (2001).

 

42. “Effective compliant substrate for low-dislocation relaxed SiGe growth”

       Y.H.Luo, J.L.Liu, G.Jin, J.Wan, K.L.Wang, C.D.Moore, M.S.Goorsky, C.Chih, and K.N.Tu

        Appl.Phys.Lett. 78, 1219(2001)

 

41. “Response to “Comment on ‘Optical and Acoustic Phonon Modes in Self-organized Ge Quantum Dot Superlattices”

       J.L.Liu, G.Jin, Y.S.Tang, Y.H.Luo, K.L.Wang, and D.P.Yu

       Appl.Phys.Lett. 78, 1162(2001)

 

40. “Infrared Multi-Spectral Detection Using Si/SixGe1-x Quantum Well Infrared Photodetectors”

       D.Krapf, B.Adoram, J.Shappir , A.Sa’ar, S.G.Thomas, J.L.Liu and K.L.Wang

       Appl.Phys.Lett. 78, 495(2001)

 

39. “Compliant effect of low-temperature Si buffer for SiGe growth”

       Y.H.Luo, J.Wan, R.L.Forrest, J.L.Liu, G.Jin, M.S.Goorsky, and K.L.Wang

        Appl.Phys.Lett. 78, 454(2001)

 

38. “Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices”

        T.Borca-Tasciuc, W.L.Liu, J.L.Liu, T.F.Zeng, D.W.Song, C.D.Moore, G.Chen, K.L.Wang,

        M.S.Goorsky, T.Radetic, R.Gronsky, T.Koga, and M.S.Dresselhaus

        Superlattices and Microstructure, Vol.28, 199(2000)

 

37. “Experimental proof-of-principle investigation of enhanced Z3DT in (001) oriented Si/Ge superlattices”

        T.Koga, S.B.Cronin, M.S.Dresselhaus, J.L.Liu, and K.L.Wang

        Appl.Phys.Lett. 77, 1490(2000)

 

36. “In-plane Lattice Thermal Conductivity of a Quantum Dot Superlattice”

       A.Khitun, A.Balandin, J.L.Liu, and K.L.Wang

       J.Appl.Phys. 88, 696(2000)

 

35. “Perfect alignment of self-organized Ge islands on pre-grown Si stripe mesas”

       G.Jin, J.L.Liu, S.G.Thomas, Y.H.Luo, and K.L.Wang

       Appl. Phys. A, 70, 551(2000)

 

34. “Regimented placement of self-assembled Ge dots on selectively grown Si mesas”

       G.Jin, J.L.Liu, and K.L.Wang

        Appl.Phys.Lett. 76(24), 3591(2000) 

 

33. “Optical and Acoustic Phonon Modes in Self-organized Ge Quantum Dot Superlattices”

        J.L.Liu, G.Jin, Y.S.Tang, Y.H.Luo, K.L.Wang, and D.P.Yu

        Appl.Phys.Lett. 76(5), 586(2000)

 

32. “Infrared Spectroscopy of Intraband Transitions in Ge/Si Quantum Dot Superlattice”

       W.G.Wu, J.L.Liu, Y.S.Tang, and K.L.Wang

       Superlattice and Microstructures, 26(3), 219(1999)

 

31. “Response to Comment on “Raman Scattering from a Ge Dot Superlattice”

       J.L.Liu, Y.S.Tang, and K.L.Wang

       Appl.Phys.Lett. 75(22), 3574(1999)

 

30. “Controlled Arrangement of Self-organized Ge Islands on Patterned Si (001) Substrates”

       G.Jin, J.L.Liu, S.G.Thomas, Y.H.Luo, K.L.Wang, and Bich-Yen Nguyen

       Appl.Phys.Lett. 75(18), 2752(1999)

 

29. “Observation of Inter-sub-level Transition in Modulation-doped Ge Quantum Dots”

       J.L.Liu, W.G.Wu, A.Balandin, G.Jin, Y.H.Luo, S.G.Thomas, Y.Lu, and K.L.Wang

       Appl.Phys.Lett. 75(12), 1745(1999)

 

28. “A Surfactant-mediated Relaxed Si0.5Ge0.5 Graded Layer with a Very Low Threading Dislocation Density and Smooth Surface”

        J.L.Liu, C.D.Moore, G.D.U’Ren, Y.H.Luo, Y.Lu, G.Jin, S.G.Thomas, M.S.Goorsky, and K.L.Wang

        Appl.Phys.Lett. 75(11), 1586(1999)

 

27. “Growth and Study of Self-organized Ge Quantum Wires”

       G.Jin, Y.S.Tang, J.L.Liu, and K.L.Wang

       Appl.Phys.Lett. 74, 2471(1999)

 

26. “Raman Scattering from a Ge Dot Superlattice”

        J.L.Liu, Y.S.Tang, K.L.Wang, T.Radetic, and R.Gronsky

        Appl.Phys.Lett. 74(13), 1863(1999)

 

25. “Intersubband Absorption in Boron-doped Multiple Ge Quantum Dots”

       J.L.Liu, W.G.Wu, A.Balandin, G.L.Jin, and K.L.Wang

       Appl.Phys.Lett. 74(2), 185(1999)

 

24. “Growth of Si Whiskers on Au/Si (111) Substrate by Gas Source MBE”

       J.L.Liu, S.J.Cai, G.L.Jin, S.G.Thomas, and K.L.Wang

       J.Crystal.Growth, 200, 106(1999)

 

23.  “Wirelike Growth of Si on An Au/Si (111) Substrate by Gas Source Molecular Beam Epitaxy”

J.L.Liu, S.J.Cai, G.L.Jin, and K.L.Wang

       Electrochemical and Solid-State Letters, 1(4), 188(1998).

 

22.  “Research about Silicon Crystal Wires Growth by Vapor-liquid-solid Reaction Method”

Y.Lu, Y.Shi, J.L.Liu, F.Wang, S.M.Zhu, S.L.Gu, and Y.D.Zheng

Journal of Functional Materials & Devices, 30(1), 31(1999). (In Chinese)

 

21.  “Study on Thermal Oxidation of Nanowires”

        J.L.Liu, Y.Lu, Y.Shi, S.L.Gu, R.L.Jiang, F.Wang, Y.D.Zheng

        Physica Status Solidi, Vol.68, No.2, 441(1998)

 

20.  “Fabrication of Silicon Nanowires”

        J.L.Liu, Y.Lu, Y.Shi, S.L.Gu, R.L.Jiang, F.Wang, Y.D.Zheng

        Applied Physics A, V66 N5, 539(1998).

 

19.  “Highly Selective Chemical Etching of Si vs. Si1-XGeX Using NH4OH Solution”

        F.Wang, Y.Shi, J.L.Liu, Y.Lu, S.L.Gu, and Y.D.Zheng

        Journal of the Electrochemical Society, V144 N3, L37(1997).

 

18.  “Al/Si1-XGeX/Si Schottky Contacts with Controllable Barrier Heights”

        R.L.Jiang, J.Li, X.C.Zhou, J.L.Liu, and Y.D.Zheng

        Chinese Journal of Semiconductor, Vol.17, No.7, 541(1996).  (In Chinese)

 

17.  “Fabrication of Silicon Quantum Wires Using SiGe Heteroepitaxy”

        Y.Lu, Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, and Y.D.Zheng

        Research &Progress of SSE, Vol.16, 201(1996). (In Chinese)

 

16.  “A Method for Fabricating Silicon Quantum Wires Based on SiGe/Si Heterostructure”

        J.L.Liu, Y.Shi, F.Wang, Y.Lu, R.Zhang, P.Han, S.L.Gu, and Y.D.Zheng

        Appl.Phys.Lett. V68 N3, 352(1996).

 

15.  “Properties of Schottky Contact of Al on SiGe Alloys”

        R.L.Jiang, J.L.Liu, J.Li, Y.Shi, and Y.D.Zheng

        Appl.Phys.Lett. V68 N8, 1123(1996).

 

14.  “Realization of Silicon Quantum Wires Based on Si/SiGe/Si Heterostructure”

        J.L.Liu, Y.Shi, F.Wang, Y.Lu, S.L.Gu, and Y.D.Zheng

        Zeitschrift Fur Physik B, V100 N4, 489(1996).

 

13.  “Study of Dry Oxidation of Triangle-shaped Silicon Nanostructure”

        J.L.Liu, Y.Shi, F.Wang, Y.Lu, S.L.Gu, R.Zhang, and Y.D.Zheng

        Appl.Phys.Lett. V69 N12, 1761(1996).

 

12.  “Realization of Silicon Quantum Wires by Selective Chemical Etching and Thermal Oxidation”

         J.L.Liu, Y.Shi, F.Wang, Y.Lu, R.Zhang, S.L.Gu, P.Han, and Y.D.Zheng

        Appl. Phys. A, V63 N4, 371(1996).

 

11.  “Ultra-fine Silicon Quantum Wires with Si/SiO2 Heterostructure”

        Y.Shi, J.L.Liu, F.Wang, R.Zhang, P.Han, S.M.Zhu, B.H.Mao, and Y.D.Zheng

        Chinese Sci. Bull. 40(18), 1727(1995). (In Chinese)

 

10.  “Silicon Quantum Wire Array Embedded in Silicon Dioxide”

        Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, L.Q.Hu, and Y.D.Zheng

        Chinese Journal of Semiconductor, Vol.16, No.10, 798(1995). (In Chinese)

 

9.  “Fabrication of Silicon Quantum Wires Using Silicon Processing”

        Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, S.M.Zhu, and Y.D.Zheng

        High Technology Lett. 5(10), 32(1995).  (In Chinese)

 

8.   “Fabrication of Silicon Quantum Wires Using Silicon Processing”

       Y.Shi, J.L.Liu, F.Wang, R.Zhang, S.L.Gu, P.Han, S.M.Zhu, and Y.D.Zheng

       High Technology Lett. 1(1), 25(1995).

 

7.    “Fabrication of Silicon Quantum Wires by Anisotropic Wet Chemical Etching and Thermal Oxidation”

 J.L.Liu, Y.Shi, F.Wang, R.Zhang, P.Han, B.H.Mao, and Y.D.Zheng

        J.Vac.Sci.&Technol.B, V13 N5, 2137(1995).

 

6.    “Formation of Luminescence Porous Silicon by 2-step Chemical Immersion and Role of NO2 in Etching”

        C.E.Liu, J.L.Liu, J.L.Wang, and X.M.Bao

        Science in China Series A, V24 N7, 709(1994). (In Chinese)

 

5.    “Formation of Luminescence Porous Silicon by 2-step Chemical Immersion and Role of NO2 in Etching”

        C.E.Liu, J.L.Liu, J.L.Wang, and X.M.Bao

        Science in China Series A, V37 N10, 1210(1994).

 

4.    “Growth and Transport Property of Si/Si0.7Ge0.3/Si p-type Modulation-doped Double Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, H.F.Li, and H.Z.Zheng

       Chinese Journal of Semiconductor, Vol.15, No.7, 501(1994). (In Chinese)

 

3.   “High Hole Mobility Si/Si1-XGeX/Si Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, G.Z.Zheng, Y.Y.Wei, and X.C.Shen

       Chinese Physics Letters, V11 N2, 116(1994).

 

2.   “Hole Transport Properties of Si/Si1-XGeX Modulation-doped Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, H.F.Li, and H.Z.Zheng

       Superlattice and Microstructures, V16 N4, 375(1994).

 

1.   “Transport Properties of Si/Si1-XGeX/Si p-type Modulation Doped Double Heterostructure”

       R.L.Jiang, J.L.Liu, Y.D.Zheng, H.F.Li, and H.Z.Zheng

       J.Appl.Phys. V76 N4, 2544(1994).

 

B: Referred conference papers:

 

1.  “Si1-XGeX/Si multiple quantum well wires fabricated by selective etching”

       Y.Shi; F.Wang; J.L.Liu; R.Zhang; P.Han; S.L.Gu; L.Q.Hu; S.M.Zhu; Y.D.Zheng

       Mat.Res.Soc.Symp.Proc., Vol.379, 91(1995)

 

2.  “Schottky barrier heights of Al/p-Si1-XGeX/Si”

       R.L.Jiang; J.Li; X.C.Zhou; J.L.Liu; Y.D.Zheng

       Mat.Res.Soc.Symp.Proc., Vol.379, 223(1995)

 

3.  “Characterization of metal/Si1-XGeX/Si diodes fabricated by cryogenic processing”

       L.He; E.Li; Z.Q.Shi; R.L.Jiang; J.L.Liu; Y.Shi; Y.D.Zheng

       Mat.Res.Soc.Symp.Proc., Vol.379, 121(1995)

 

4.  “Ultrafine Silicon Quantum Wires Fabricated by Selective Chemical Etching and Thermal Oxidation”

        Y.Shi, J.L.Liu, F.Wang, Y.Lu, R.Zhang, S.L.Gu, P.Han, L.Q.Hu, Y.D.Zheng, C.Y.Lin, and D.A.Du

        42nd National Symposium of the American Vacuum Society, Minneapolis,

        MN, USA, 16-20 Oct. 1995       

        J.Vac.Sci.&Technol.A, V14 N3, 1194(1996).

 

5. “Heat Conduction in Alloy-based Superlattices”

       G.Chen, S.Q.Zhou, D.Y.Yao, C.J.Kim, X.Y.Zheng, J.L.Liu, K.L.Wang

       Oral presentation at 17th International Thermoelectrics Conference, Nagoya, Japan, May 24-28, 1998

        Proceedings of ICT'98, page 202

 

6.  “Gas Source MBE Growth of Freestanding Si Nano-Wires on Au/Si Substrates”

       J.L.Liu, S.J.Cai, G.L.Jin, Y.S.Tang, and K.L.Wang

       Oral presentation at the Eleventh International Conference on Superlattice, Microstructures and

       Microdevices (ICSMM-11), Hurgada, Egypt, 7/27-8/1, 1998      

       Superlattice and Microstructures, Vol. 25, 477(1999)

 

7.  “Raman Scattering and Infrared Absorption in Multiple Boron-doped Ge Dots”

        J.L.Liu, W.G.Wu, Y.S.Tang, K.L.Wang, T.Radetic, and R.Gronsky

Oral presentation at the 45th International Symposium of American Vacuum Society, Baltimore,

        Maryland, Nov.2-6, 1998

        J.Vac.Sci.Technol.A, 17(4), 1420(1999)

 

8.  “Self-organized Ge Quantum Wires on Si (111) Substrate”

       G.Jin, Y.S.Tang, J.L.Liu, and K.L.Wang

Oral presentation at the 45th International Symposium of American Vacuum Society, Baltimore,

       Maryland, Nov.2-6, 1998

       J.Vac.Sci.Technol.A, 17(4), 1406(1999)

 

9.  “Experimental Study of the Effect of the Quantum Well Structures on the Thermoelectric Figure of Merit in Si/Si1-XGeX System”

 X.Sun, J.L.Liu, S.B.Cronin, K.L.Wang, G.Chen, T.Koga, and M.S.Dresselhaus

 Oral presentation at the MRS 1998 Fall Meeting, Nov 30-Dec.4, 1998

       Mater.Res.Soc.Symp.Proc., Vol.524, 369(1999)

 

10. “Experimental Study of the Effects of Phonon-folding on Thermal and Thermoelectric Properties of Si/SiGe Superlattice”

J.L.Liu, A.Balandin, Y.S.Tang, K.L.Wang, and G.Chen

Poster presentation at the MRS 1998 Fall Meeting, Nov 30-Dec.4, 1998

Mat.Res.Soc.Symp.Proc., Vol.524, 111(1999)

 

11. “Anisotropic Thermal Conductivity of a Si/Ge Superlattice”

 T.Borca-Tasciuc, D.Song, J.L.Liu, G.Chen, K.L.Wang, X.Sun, M.S.Dresselhaus,

 T.Radetic and R.Gronsky

 Oral presentation at the MRS 1998 Fall Meeting, Nov 30-Dec.4, 1998

 Mat.Res.Soc.Symp.Proc., Vol.524, 473(1999)

 

12. “Mid-Infrared Absorption in Boron-doped Self-assembled Ge Quantum Dots Grown on Si Substrates”

W.G.Wu, J.L.Liu, G.L.Jin, and K.L.Wang

Oral presentation in the conference of Photonics West Optoelectronics’99, January 25-29, San Jose, California

Proceedings of the SPIE, Vol. 3630, 98(1999)

 

13.  “Optimization of the Thermoelectric Properties via Phonon Engineering”

         A.Balandin, J.L.Liu, A.Khitun, T.Borca-Tasciuc, K.L.Wang and G.Chen

         Poster presentation at the ICT99 International Conference on Thermoelectrics,

         Baltimore, MD, USA, Sunday August 29 - Thursday September 2, 1999

         Proceedings of ICT99, page 189.

 

14. "Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si/sub 1-x/Ge/sub x/ system"

        Sun, X.; Cronin, S.B.; Liu, J.; Wang, K.L.; Koga, T.; Dresselhaus, M.S.; Chen, G.

        Oral presentation at the ICT99 International Conference on Thermoelectrics,

        Baltimore, MD, USA, Sunday August 29 - Thursday September 2, 1999

        Proceedings of ICT99, page 652.

 

15.  “Thermal Conductivity and Heat Conduction in Si/Ge Superlattices”

  T.Borca-Tasciuc, J.L.Liu, T.Zeng, W.L.Liu, D.Song, G.Chen, K.L.Wang, C.Moore,

  M.Goorsky, T.Radetic, R.Gronsky, X.Sun, M.S.Dresselhaus

         Oral presentation at the ICT99 International Conference on Thermoelectrics,

         Baltimore, MD, USA, Sunday August 29 - Thursday September 2, 1999

         Proceedings of ICT99, p.201-4.

 

16.  “Inter-sub-level Spectroscopy of P-type Modulation Doped Ge Quantum Dots”

 J.L.Liu, W.G.Wu, G.Jin, and K.L.Wang

 Oral presentation at the MRS’99 Spring Meeting, San Francisco, 1999

 Mat.Res.Soc.Symp.Proc., Vol.571, 15(2000)

 

17. “Mechanism of preference of edge-positioning of self-organized Ge quantum dots on Si mesas”

 G.Jin, Y.S.Tang, J.L.Liu, S.G.Thomas, K.L.Wang, Greg U’ren, and M.S.Goorsky

 Poster presentation at the MRS’99 Spring Meeting, San Francisco, 1999

 Mat.Res.Soc.Symp.Proc., Vol.571, 31(2000)

 

18. “Study of Phonons in Self-organized Multiple Ge Quantum Dots”

       J.L.Liu, G.Jin, Y.S.Tang, Y.H.Luo, Y.Lu, and K.L.Wang

Oral presentation at the 41st Electronic Materials Conference, 1999, Santa Babara

       J. Electronic Materials, 29(5), 554(2000)

 

19. “Control of the Arrangement of Self-organized Ge Dots on Patterned Si(001) Substrates”

       G.Jin, J.L.Liu, Y.H.Luo, K.L.Wang

        Oral presentation at the International Joint Conference on Silicon Epitaxy and Heterostructures

        (IJC-Si), (Si-MBE8), September 12-17, 1999, Miyagi, Japan

       Thin Solid Films, 369, 49(2000)

 

20. “Experimental Study of a Surfactant-assisted SiGe Graded Layer and a Symmetrically Strained Si/Ge Superlattice for Thermoelectric Applications”

        J.L.Liu, K.L.Wang, C.D.Moore, M.S.Goorsky, T.Borca-Tasciuc, G.Chen

        Oral presentation at the International Joint Conference on Silicon Epitaxy and Heterostructures

        (IJC-Si), (Si-MBE8), September 12-17, 1999, Miyagi, Japan

        Thin Solid Films, 369, 121(2000)

 

21. “Low-dislocation relaxed SiGe grown on an effective compliant substrate”

       Y.H.Luo, J.L.Liu, G.Jin, and K.L.Wang

Oral presentation at the 41st Electronic Materials Conference, 1999, Santa Babara

        J. Electronic Materials, 29, 950(2000)

 

22. “Control of the arrangement of self-organized Ge dots on patterned Si(001) Substrates”

       G.Jin, J.L.Liu, Y.H.Luo, and K.L.Wang

       Oral presentation in E-MRS 2000, France

       Thin Solid Film, Vol. 380, 169(2000)

 

23. “Growth Study of Surfactant-mediated Relaxed SiGe Graded Layers for 1.55 µm Photodetector Applications”

        J.L.Liu,  T.Radetic, Y.S.Tang, D.Teng, G.Jin, Y.H.Luo, J.Wan, R.Gronsky, and K.L.Wang

        Oral presentation in E-MRS 2000, France

        Thin Solid Film, Vol. 380, 54(2000)

 

24. “Uniform and ordered Ge dots on patterned Si substrates with selectively epitaxial growth technique”

        G.Jin, J.Wan, Y.H.Luo, J.L.Liu, and K.L.Wang

 Oral presentation at the MBE-XI, 2000, September 10-15, Beijing, China

        J. Crystal Growth, 227, 1100(2001)

 

25. “Growth of Ge quantum dot superlattices for thermoelectric applications”

        J.L.Liu, A.Khitun, K.L.Wang, T.Borca-Tasciuc, W.L.Liu, G.Chen, and D.P.Yu

Poster presentation at the MBE-XI, 2000, September 10-15, Beijing, China

        J. Crystal Growth, 227, 1111(2001)

 

26. “Carbon nanotubes grown by gas source molecular beam epitaxy”

        J.Wan, Y.H.Luo, J.L.Liu, R.G.Li, G.Jin, Sung D. Choi, and K.L.Wang

Oral presentation at the MBE-XI, 2000, September 10-15, Beijing, China

        J. Crystal Growth, 227, 820(2001)

 

27. “Highly Efficient Ge Detector Integrated with Waveguide Based on SOI Technology ”

        Y.S.Tang, H.C.Shi, J.Chan, J.L.Liu, D.Teng, and K.L.Wang

        Oral presentation in the conference of Photonics West Optoelectronics’01, January 23-26,

        San Jose, California

        Proceedings of SPIE - The International Society for Optical Engineering, Silicon-based and

        Hybrid Optoelectronics III, 2001, San Jose, CA, Vol. 4293, p 114-117, 2001

 

28. “In-Plane Thermoelectric Properties Characterization of a Si/Ge superlattice using a Microfabricated Test Structure”

        T.Borca-Tasciuc, W.L.Liu, J.L.Liu, K.L.Wang, and G.Chen

        2001 National Heat Transfer Conference (Anaheim, June 10-12 2001)

        Proceedings of  NHTC’01, page 1-9(2001)

 

29. “In-plane thermal and electronic transport in quantum dot superlattice”

A.Khitun, A. Balandin, J.L.Liu, and K.L.Wang

        MRS 2001 Spring Meeting, San Francisco, April 16-20, 2001

       Mat.Res.Soc.Symp.Proc., Vol.677, (2001)

 

30. “Optical study of SiGe films grown on low-temperature Si buffer”

       Y.H.Luo, J.Wan, J.L.Liu, and K.L.Wang

       2001 MRS Spring Meeting, San Francisco, April 16-20, 2001

       Mat.Res.Soc.Symp.Proc., Vol.673, (2001)

 

31. “Photoluminescence of multi-layer GeSi dots grown on Si (001)”

       J.Wan, Y.H.Luo, G.L.Jin, Z.M.Jiang, J.L.Liu, X.Z.Liao, J.Zou, and Kang L. Wang

       2001 MRS Spring Meeting, San Francisco, April 16-20, 2001

       Mat.Res.Soc.Symp.Proc., Vol.667, (2001)

 

32. “Characterization of Cross-plane Thermoelectric Properties of Si/Ge Superlattices”

        Bao Yang, Jianlin Liu, Kang Wang, and Gang Chen

        ICT 2001, Beijing, China, June 8-11, 2001

        Proceedings of ICT 2001, page 344-347

 

33. “MEMS Thermoelectric Cooler”

       Da-Jeng Yao, C.J.Kim, J.L.Liu, Kang L. Wang; J. Snyder, J.-P. Fleurial, and G.Chen

       ICT 2001, Beijing, China, June 8-11, 2001

       Proceedings of ICT 2001, page 401-404

 

34. “Thermoelectric Property Characterization of Low-Dimensional Structures”

       G.Chen, B.Yang, W.L.Liu, T.Borca-Tasciuc, D.Song, D.Achimov, M.S.Dresselhaus,

       J.L.Liu, and K.Wang

       ICT 2001, Beijing, China, June 8-11, 2001

       Proceedings of ICT 2001, page 30-34

 

35. “In-plane Thermoelectric Properties of SiGe Superlattices”

 W.L.Liu, T.Borca-Tasciuc, J.L.Liu, K.Taka, K.L.Wang, M.S.Dresselhaus, and G. Chen

        ICT 2001, Beijing, China, June 8-11, 2001

        Proceedings of ICT 2001, page 340-343

 

36.  “Self-assembled Ge quantum dots on Si and their applications”

        K.L.Wang, J.L.Liu, and G.Jin

        Invited paper at the first International Workshop on New Group IV (Si-Ge-C) Semiconductors:

       Control of Properties and Applications to Ultrahigh Speed and Opto-electronic Devices”,

        Sendai, Japan, January 21-23, 2001.

        Journal of Crystal Growth, 237, 1892(2002)

 

37. “Normal-incidence Near 1.5 Micron Ge Quantum Dot Photodetectors On Si Substrate With High Quantum Efficiency”

       S. Tong, J.L.Liu, Jun Wan, and Kang L. Wang

       APOC 2001, Asia-Pacific Optical and Communications Conferences and Exhibition,

       November 12-16, 2001, Beijing International Convention Center, Beijing, China

       Proceedings of SPIE vol.4580, p.193-201, edited by Qiming Wang and Tien P. Lee

 

38. “Cross-plane Thermoelectric Properties of Si/Ge Superlattice”

       Bao Yang, Jian L. Liu, Kang L. Wang, and Gang Chen

       MRS 2001 Fall meeting

       Mat.Res.Soc.Symp.Proc., Vol.691, 71(2001)

 

39. “Microstructure and optical properties of Ge(Si) dots grown on Si”

         Wan, J.; Tong, S.; Jiang, Z.M.; Jin, G.; Luo, Y.H.; Liu, J.L.; Liao, X.Z.; Zou, J.; Wang, K.L.

        Proceedings of the SPIE, vol.4656, p.89-94, 2002

 

40. “Quantum and classical size effects on thermoelectric transport in Si/Ge superlattices”

        W. L. Liu, G. Chen, J. L. Liu and K. L. Wang

        ICT 2002, August 25-29, 2002, Long Beach, California

        Proceedings of ICT 2002, page 130

 

41. “Critical thickness of self-assembled Ge quantum dot superlattices”

        J. L. Liu, J. Wan, K. L. Wang, and D. P. Yu

        MBE-XII, San Francisco 2002

        J. Crystal Growth 251, 666(2003)

 

42. “Thermal Conductivity of Ge/Si Quantum Dot Superlattices”

        A. Khitun, J. L. Liu and K. L. Wang

        IEEE NANO 2004, August 17-19, Munich, Germany

 

43.  ''Carrier and phonon transport in Ge/Si quantum dot superlattices,''

       Y. Bao, W.L. Liu, M. Shamsa, K. Alim, A.A. Balandin, and J.L. Liu

       Proceedings of the International Symposium on Nanoscale Devices and Materials, Honolulu, Hawaii, USA,

      October 2004, 14 m.p., 2004.

 

44. “A Novel Approach to Evaluate the Carrier Effective Mass in GeSi Quantum Dot Superlattices”

       Zheng Yang, Yi Shi, Jianlin Liu, Bo Yan, Rong Zhang, Youdou Zheng, and Kanglong Wang

      The 7th International Conference on Solid-State and Integrated-Circuit Technology,

        October 18-21, 2004, Beijing, China, ICSICT'2004

 

45.  “Computer Simulation of Charging/Erasing Transients of a Ge/Si Hetero-nanocrystal-based Flash Memory”

        Dengtao Zhao, Yan Zhu, Ruigang Li, and Jianlin Liu

        MRS Fall 2004, Boston, USA, November 29-December 3, 2004

 

46.  “Threshold Voltage Shift in Hetero-Nanocrystal Floating Gate Flash Memories”

        Yan Zhu, Dengtao Zhao, Ruigang Li, and Jianlin Liu

        MRS Fall 2004, Boston, USA, November 29-December 3, 2004

 

47. “ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE”

        F. X. Xiu, Z. Yang, D. T. Zhao, J. L. Liu, K. Alim, A. A. Balandin, M. Itkis, and R. Haddon

        EMC 2005, Santa Barbara, California, June 22-24, 2005

 

48.  “Characteristics of phosphorus doped p-type ZnO by MBE”

        F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu

        MRS Fall 2005, Boston, USA, November 27-December 1, 2005

 

49. “UV photoconductors based on Ga-doped ZnO films”

        L. J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liu

        MRS Fall 2005, Boston, USA, November 27-December 1, 2005

 

50. “p-type ZnO by Sb doping for PN-junction photodetectors”

        J. L. Liu, F. X. Xiu, L. J. Mandalapu, and Z. Yang

        Photonics West 2006, San Jose, USA, Jan 21-26, 2006

 

51. “Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory”

      Yan Zhu, Bei Li and Jianlin Liu

     MRS Spring 2007, San Francisco, USA, Mater. Res. Soc. Symp. Proc. Vol. 997, 0997-I02-05, 2007

 

52. “Electron carrier concentration dependent magnetization in ZnO:Co and ZnO:Mn thin films”

        Zheng Yang, Maurizio Biasini, L. J Mandalapu, Zheng Zuo, Ward P Beyermann, and Jianlin Liu

        MRS Fall 2007, Boston, USA, Mater. Res. Soc. Symp. Proc. Vol. 1035, 1035-L06-06, 2008

 

53.  “High-performance hetero-nanocrystal memories”

        Bei Li, Yan Zhu, Huimei Zhou, and Jianlin Liu

        2008 9th International Conference on Solid-state and Integrated Circuits Technology, Oct 20-Oct 23, 2008, Beijing, (Invited)

 

C: Book chapters:

 

1.  “Thermoelectric Properties of Low-dimensional SiGe Structures”

       K.L.Wang, J.L.Liu, A.Balandin, and A.Khitun

       In the “Properties of Silicon Germanium and SiGe:Carbon”, emis Datareviews series, No. 24,

       Chapter 3.2, page 94-114, Edited by E. Kasper, and K.Lyutovich, 2000

 

2. “Quantum Dots: Phonons in Self-Assembled Multiple Germanium Structures”

     J. L. Liu, A. Khitun, and K. L. Wang

     Dekker Encyclopedia of Nanoscience and Nanotechnology, Marcel Dekker, Inc, page 3203-3211

     Edited by James A. Schwarz, Cristian I. Contescu, and Karol Putyera, 2004

 

3. “Self-assembled Ge quantum dots on Si and their optoelectronic devices”

      J. L. Liu, S. Tong, and K. L. Wang

    Handbook of Semiconductor Nanostructure and Devices, 3 volumes, American Scientific Publishers,

     Los Angeles, California, USA, A.A. Balandin, K.L. Wang (eds.), vol.1 page 1-32, 2006

 

 

Note: Pdf files are copyrighted works of their publishers. U.S Copyright Law requires that you get permission from the paper’s rightholder before using it.